PART |
Description |
Maker |
MA4ST550 MA4ST551 MA4ST552 MA4ST553 MA4ST554 MA4ST |
L-KU BAND, 2.7 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE L-KU BAND, 0.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE High Q Hyperabrupt Tuning Varactors L-KU BAND, 1.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
MACOM[Tyco Electronics]
|
MA4X348 |
Silicon planar type VHF BAND, 13 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
ABP9001-868 ABP9002-806 ABP9002-700 ABM3001-868 AB |
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE SILICON, HIGH BARRIER SCHOTTKY, S BAND, MIXER DIODE SILICON, HIGH BARRIER SCHOTTKY, X BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
|
Vishay Beyschlag Advanced Semiconductor, Inc. ADVANCED SEMICONDUCTOR INC
|
MA27V12 |
Silicon epitaxial planar type For VCO UHF BAND, 3.75 pF, 8 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
|
GC1310 KV1963A KV1953A KV1923A KV1913A1 KV2123 KV1 |
C BAND, 3.9 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒Hyperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM C BAND, 16.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 1.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation MICROSEMI CORP-LOWELL
|
CHV2243A |
Fully Integrated Q-band VCO based on Ku-band Oscillator and Q-band Multiplier
|
United Monolithic Semiconductors
|
MT6L61AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
MA2Z377 PANASONICCORP-MA2Z377 |
20 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor UHF BAND, 3.1 pF, SILICON, VARIABLE CAPACITANCE DIODE Silicon epitaxial planar type
|
Panasonic, Corp. Panasonic Semiconductor
|
DME2031-225 DMJ2303-221 |
SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, HIGH BARRIER SCHOTTKY, S BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
SKY77573-21 |
Quad-band cellular handsets encompassing Tx-Rx Front-End Module for Quad-Band GSM/ GPRS/ EDGE with 4-Band Antenna Switch Support
|
Skyworks Solutions Inc.
|
SKY77195 |
Dual-Band PA Module for WCDMA / HSDPA Band I (1920-1980 MHz) and Band VIII (880-915 MHz)
|
Skyworks Solutions Inc.
|
|